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MSCSM70AM025D3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 689A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MSCSM70AM025D3AG
- Description：MOSFET 2N-CH 700V 689A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N Channel (Phase Leg)
- FET Feature：-
- Drain to Source Voltage (Vdss)：700V
- Current - Continuous Drain (Id) @ 25°C：689A (Tc)
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id：2.4V @ 24mA
- Gate Charge (Qg) (Max) @ Vgs：1290nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：27000pF @ 700V
- Power - Max：1.882kW (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MSCSM70AM025D3AG
FET, MOSFET Arrays Overview
The MSCSM70AM025D3AG is a 700V/689A phase leg silicon carbide (SiC) power module. It features an N-channel SiC MOSFET with a maximum drain-source voltage of 700V and a continuous drain current of 689A at 25°C case temperature. The device has a typical on-resistance of 2.5mΩ at 25°C and 3.2mΩ at 175°C. It utilizes an Aluminum Nitride substrate for thermal management, offers Kelvin source connections, and supports screw mounting via M6 connectors.
FET, MOSFET Arrays Feature Summary
- Utilizes Silicon Carbide technology for high-temperature performance and low on-resistance
- Incorporates an Aluminum Nitride substrate to improve thermal dissipation
- Features Kelvin source connections to facilitate easy gate drive implementation
- Provides direct heatsink mounting capability within an isolated package design
FET, MOSFET Arrays Applications
- Uninterruptible power supplies
- Welding converters
- Switched mode power supplies
- EV motor and traction drive systems
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the required operating junction temperatures and thermal interface materials align with the module's specified limits. Ensure handling procedures account for electrostatic discharge sensitivity during installation and testing phases.
FET, MOSFET Arrays Selection Notes
Select this component when designing high-efficiency converters requiring robust high-frequency operation. The isolated package allows direct mounting to heatsinks, reducing system complexity. Evaluate the thermal resistance characteristics to ensure adequate cooling solutions are implemented for sustained high-current applications.
FET, MOSFET Arrays Part Context
This module belongs to Microchip's discrete semiconductor modules category, specifically designed as a phase leg SiC power module. It integrates high-voltage switching capabilities into a single compact unit, replacing multiple discrete components to enhance reliability and reduce board space in advanced power electronics designs.
FET, MOSFET Arrays Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Cross-reference electrical ratings and physical dimensions carefully to ensure compatibility with existing circuit layouts and thermal management systems.
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