MSCSM70DUM017AG

FET, MOSFET Arrays Overview

The MSCSM70DUM017AG is a dual common source silicon carbide (SiC) MOSFET power module rated for 700V drain-source voltage. It features a typical on-resistance of 1.7mΩ at 25°C and supports continuous drain currents up to 1021A at 25°C case temperature. The device utilizes an aluminum nitride substrate for thermal management and includes Kelvin sources for optimized gate drive. Key electrical parameters include a maximum junction-to-case thermal resistance of 0.055°C/W, a pulsed drain current capability of 2000A, and an operating junction temperature range from -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide technology for high-temperature performance and low on-resistance
• Incorporates an aluminum nitride substrate to improve thermal dissipation
• Features Kelvin source connections to facilitate easy and precise gate driving
• Designed with low stray inductance for outstanding high-frequency operation

FET, MOSFET Arrays Applications

• AC switches
• Switched mode power supplies
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004339A against your design requirements before procurement. Confirm that the M5 power connector torque specifications align with your assembly tools. Ensure electrostatic discharge handling procedures are strictly followed during installation, as the devices are sensitive to ESD. Cross-reference the isolation voltage ratings with your system safety standards.

FET, MOSFET Arrays Selection Notes

Select this module when high current density and efficient thermal management are required. The dual common source configuration simplifies half-bridge or three-phase leg designs. Consider the 1.7mΩ typical on-resistance for conduction loss calculations. Evaluate the 0.055°C/W thermal resistance for heatsink sizing. Verify compatibility with the recommended junction temperature limits under switching conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's discrete semiconductor modules category, specifically within the PM-MOSFET-SIC-SP3F subcategory. It is part of the broader family of silicon carbide power modules designed for robust industrial and automotive applications. The SP3F package provides an isolated mounting solution suitable for direct heatsink attachment.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.