MSCSM70DUM025AG

$529.94

Description：MOSFET 2N-CH 700V 689A
Series：-

SKU:34dcb29a35e9 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70DUM025AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 689A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70DUM025AG

Description：MOSFET 2N-CH 700V 689A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：689A (Tc)
Rds On (Max) @ Id, Vgs：3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id：2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs：1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：27000pF @ 700V
Power - Max：1882W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70DUM025AG

MSCSM70DUM025AG

FET, MOSFET Arrays Overview

The MSCSM70DUM025AG is a dual common source silicon carbide (SiC) MOSFET power module rated at 700V and 689A. It features an aluminum nitride substrate for improved thermal performance and M5 power connectors. The device provides low RDS(on), high temperature performance, and a Kelvin source for easy drive. Key electrical parameters include a maximum drain-source voltage of 700V, continuous drain current of 689A at 25°C case temperature, and a typical RDS(on) of 3.2 mΩ at 25°C. The junction-to-case thermal resistance is specified as 0.08 °C/W.

FET, MOSFET Arrays Feature Summary

Utilizes an aluminum nitride substrate to enhance thermal dissipation capabilities.
Incorporates a Kelvin source connection to facilitate simplified gate drive circuitry.
Designed with low stray inductance architecture to support high-frequency switching operations.

FET, MOSFET Arrays Applications

AC switches
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004338A against your design requirements. Confirm that the mounting torque specifications for the M5 terminals and heatsink interface align with your mechanical assembly constraints. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity.

FET, MOSFET Arrays Selection Notes

Select this module when high current density and superior thermal management are required. The dual common source configuration suits bridge topologies. Evaluate the 0.08 °C/W thermal resistance against your heatsink solution. Verify that the 700V rating accommodates your system's peak voltage transients and operating conditions.

FET, MOSFET Arrays Part Context

This component belongs to Microchip Technology's discrete semiconductor module portfolio. It utilizes silicon carbide technology to deliver higher efficiency compared to traditional silicon devices. The package is designed for direct mounting to a heatsink, providing an isolated interface suitable for industrial power conversion applications requiring robust performance.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Do not assume functional equivalence with other modules without verifying pinout compatibility and thermal characteristics.

FET, MOSFET Arrays FAQ

What is the recommended junction temperature range under switching conditions?

The recommended junction temperature under switching conditions ranges from -40°C to TJmax-25°C.

How does the Kelvin source benefit the drive circuit?

The Kelvin source allows for easy drive by separating the gate drive return path from the high-current source path, reducing noise and improving switching stability.