MSCSM70HM19T3AG

FET, MOSFET Arrays Overview

The MSCSM70HM19T3AG is a full bridge silicon carbide (SiC) power module manufactured by Microchip Technology. It features four N-channel SiC MOSFETs with a drain-source voltage of 700 V and a continuous drain current of 124 A at 25 °C case temperature. The device has a maximum on-resistance of 19 mΩ and operates within a junction temperature range of -40 °C to +175 °C. Key electrical parameters include a gate threshold voltage of 1.9 V, total gate charge of 215 nC, and turn-on delay time of 40 ns. The module utilizes an aluminum nitride substrate for thermal management and includes an internal thermistor.

FET, MOSFET Arrays Feature Summary

• Full bridge topology integrating four SiC MOSFETs in a single isolated package
• Kelvin source connection provided for simplified gate drive circuitry
• Internal negative temperature coefficient (NTC) thermistor for real-time junction temperature monitoring
• Aluminum nitride substrate utilized to achieve low junction-to-case thermal resistance

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision DS00004607A when sourcing components to ensure alignment with final design specifications. Confirm that all multiple inputs and outputs are correctly shorted according to the pinout requirements during integration. Ensure proper electrostatic discharge handling procedures are strictly followed during assembly and testing to prevent damage to the sensitive semiconductor devices.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-frequency operation and high efficiency due to its ultra-low switching losses. The Kelvin source configuration simplifies the driver layout compared to standard two-terminal sources. Consider the 124 A continuous current rating relative to the thermal management capabilities of the heatsink system. Verify that the 700 V breakdown voltage meets the bus voltage requirements of the target application.

FET, MOSFET Arrays Part Context

This device belongs to Microchip's series of silicon carbide power modules designed for high-performance power conversion. It is part of the SP1F package family, which supports direct mounting to heatsinks. The module integrates advanced SiC technology to reduce system size and improve reliability compared to traditional silicon-based solutions.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin source connection?

The Kelvin source provides a dedicated path for the gate drive return current, separating it from the main power current. This reduces noise coupling and allows for easier, more accurate driving of the MOSFET gates.

How is the junction temperature monitored in this module?

The module contains an integrated internal negative temperature coefficient (NTC) thermistor. This sensor allows for direct monitoring of the junction temperature without requiring external sensing elements.

What substrate material is used for thermal performance?

The module uses an Aluminum Nitride (AlN) substrate. This material is selected to provide improved thermal conductivity and lower junction-to-case thermal resistance compared to other ceramic materials.