MSCSM70TAM10TPAG

FET, MOSFET Arrays Overview

The MSCSM70TAM10TPAG is a triple phase leg silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features a 700V drain-source voltage rating and a continuous drain current of 238A at 25°C case temperature. The device has a typical on-resistance of 9.5 mΩ and supports an operating junction temperature range from -40°C to +175°C. Key electrical parameters include a turn-on delay time of 40ns, a fall time of 20ns, and a total gate charge of 430nC. The module utilizes an SP6-P package with screw mounting.

FET, MOSFET Arrays Feature Summary

• Triple phase leg configuration for three-phase inverter applications
• Kelvin source connection for optimized gate drive performance
• Integrated internal thermistor for precise temperature monitoring
• Aluminum Nitride substrate providing enhanced thermal conductivity

FET, MOSFET Arrays Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A against the intended design requirements before procurement. Confirm that the handling procedures strictly adhere to electrostatic discharge precautions as specified in the documentation. Ensure the mounting torque falls within the 3 to 5 N.m range for M6 screws to maintain proper thermal interface integrity. Validate that the application circuitry supports the required gate voltage levels.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-frequency power conversion systems requiring low switching losses and high efficiency. The integrated Kelvin source simplifies gate driver layout compared to standard configurations. Consider the thermal resistance characteristics and the need for direct heatsink mounting when evaluating system cooling strategies. Verify compatibility with the required isolation voltage specifications for the target application environment.

FET, MOSFET Arrays Part Context

This module belongs to Microchip's silicon carbide MOSFET product family, designed to replace traditional silicon IGBTs in high-power applications. The SP6-P package format allows for standardized mechanical integration into existing inverter designs. The technology leverages wide bandgap properties to achieve superior performance under high voltage and temperature conditions compared to conventional semiconductor devices.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum recommended junction temperature for switching operations?

The recommended junction temperature under switching conditions is TJmax minus 25 degrees Celsius.

How does the Kelvin source improve drive performance?

The Kelvin source provides a dedicated path for the gate return current, minimizing noise coupling and ensuring accurate gate voltage control during fast switching transitions.

What is the function of the internal thermistor?

The internal NTC thermistor enables real-time monitoring of the module's temperature, allowing for active thermal protection and management within the power system.