FET, MOSFET Arrays MSCSM70VM10C4AG product image

MSCSM70VM10C4AG

$264.70
  • Description:MOSFET 2N-CH 700V 238A SP4
  • Series:-

SKU:575dd67116de Category: Brand:

  
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MSCSM70VM10C4AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 238A SP4. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70VM10C4AG

  • Description:MOSFET 2N-CH 700V 238A SP4
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N Channel (Phase Leg)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):700V
  • Current - Continuous Drain (Id) @ 25°C:238A (Tc)
  • Rds On (Max) @ Id, Vgs:9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id:2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs:430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:9000pF @ 700V
  • Power - Max:674W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP4
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM70VM10C4AG

MSCSM70VM10C4AG

FET, MOSFET Arrays Overview

The MSCSM70VM10C4AG is a silicon carbide (SiC) MOSFET power module manufactured by Microchip Technology. It features an N-channel configuration housed in the SP4 package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 700 V and a continuous drain current of 238 A at case temperature. The device exhibits a typical on-resistance of 9.5 mOhms and supports a power dissipation of 674 W. Operating characteristics include a rise time of 35 ns, a fall time of 20 ns, and a gate-source threshold voltage of 1.9 V. The module operates within a temperature range of -40 C to +175 C.

FET, MOSFET Arrays Feature Summary

  • Utilizes silicon carbide technology for high-temperature operation up to 175 C
  • Integrates N-channel MOSFETs in a compact SP4 screw-mount package
  • Provides low on-resistance of 9.5 mOhms for efficient power handling

FET, MOSFET Arrays Applications

  • High-frequency power conversion systems
  • Industrial motor drive inverters
  • Uninterruptible power supply (UPS) units

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix and package designation against the official Microchip datasheet to ensure compatibility with thermal management requirements. Confirm that the SP4 mounting interface matches the intended heatsink design. Cross-reference the electrical ratings with system load profiles to validate performance under peak conditions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring robust high-voltage switching capabilities and wide bandgap efficiency. The 700 V rating and 238 A current capacity suit medium-power industrial loads. Consider the 175 C maximum junction temperature for environments demanding reduced cooling infrastructure compared to standard silicon alternatives.

FET, MOSFET Arrays Part Context

This module belongs to the Microchip SiC MOSFET discrete semiconductor product line. It is designed as a standalone power switch component rather than an integrated driver circuit. The SP4 packaging format distinguishes it from other series modules like SP3F or SP6, offering specific thermal and mechanical integration options for chassis-mounted designs.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative modules based on matching voltage, current, and thermal specifications while verifying pinout and mounting hole compatibility.

MSCSM70VM10C4AGMSCSM70VM10C4AG
$264.70
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