FET, MOSFET Arrays MSCSM70VM19C3AG product image

MSCSM70VM19C3AG

$136.95
  • Description:MOSFET 2N-CH 700V 124A SP3F
  • Series:-

SKU:cc5a3f39cc46 Category: Brand:

  
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MSCSM70VM19C3AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 124A SP3F. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70VM19C3AG

  • Description:MOSFET 2N-CH 700V 124A SP3F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N Channel (Phase Leg)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):700V
  • Current - Continuous Drain (Id) @ 25°C:124A (Tc)
  • Rds On (Max) @ Id, Vgs:19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id:2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs:215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 700V
  • Power - Max:365W (Tc)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP3F
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MSCSM70VM19C3AG

MSCSM70VM19C3AG

FET, MOSFET Arrays Overview

The MSCSM70VM19C3AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features a SP3F package with screw mount installation. The device has a drain-source breakdown voltage of 700 V and a continuous drain current of 124 A at case temperature. The on-resistance is 15 mOhms. Gate-source voltage limits are -10 V to +23 V, with a threshold voltage of 1.9 V. Power dissipation is 365 W. Operating junction temperature ranges from -40°C to 175°C. It is configured as a two N-channel phase leg.

FET, MOSFET Arrays Feature Summary

  • Utilizes Silicon Carbide technology for high-temperature operation up to 175°C.
  • Features a SP3F package with Si3N4 substrate and thick copper for improved thermal performance.
  • Designed as a Vienna Phase Leg configuration for efficient power conversion.

FET, MOSFET Arrays Applications

  • Vienna rectifier circuits
  • High-efficiency power factor correction stages
  • Industrial motor drives

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix C3AG against official Microchip documentation to ensure correct RoHS compliance status and regional availability. Confirm that the SP3F package dimensions match your mechanical design constraints. Check for any recent product change notifications regarding manufacturing location or material composition before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a low-inductance, high-current SiC solution is required for phase-leg applications. The 15 mOhm on-resistance supports high efficiency in 700V systems. Ensure gate driver capabilities align with the specified voltage limits and switching times. Evaluate thermal management requirements based on the 365W dissipation rating under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to Microchip's SP3F series of Silicon Carbide MOSFET modules. These modules are designed for high-power density applications requiring fast switching and low conduction losses. The SP3F package offers reduced parasitic inductance compared to traditional modules, enhancing performance in high-frequency switching scenarios.

FET, MOSFET Arrays Replacement Considerations

The MSCSM70TAM19T3AG is a related triple-phase module from the same manufacturer but differs in configuration and pinout. Direct substitution requires verifying electrical compatibility and mechanical mounting differences. No other public substitute part numbers are confirmed for this specific model.

MSCSM70VM19C3AGMSCSM70VM19C3AG
$136.95
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