MSCSM70VR1M07CT6AG

$443.77

Description：MOSFET 2N-CH 700V 349A
Series：-

SKU:4eb11cc14bc5 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

MSCSM70VR1M07CT6AG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 700V 349A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70VR1M07CT6AG

Description：MOSFET 2N-CH 700V 349A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：2 N Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：349A (Tc)
Rds On (Max) @ Id, Vgs：6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id：2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：13500pF @ 700V
Power - Max：966W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70VR1M07CT6AG

MSCSM70VR1M07CT6AG

FET, MOSFET Arrays Overview

The MSCSM70VR1M07CT6AG is a Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates SiC MOSFETs and Schottky diodes within an isolated package designed for direct heatsink mounting. The device features a 700V drain-source voltage rating and supports continuous drain currents of 349A at 25°C case temperature, decreasing to 278A at 80°C. Key electrical parameters include a maximum on-resistance of 6.4 mΩ and a gate-source voltage range of -10V to +23V. The module incorporates Kelvin source connections, internal thermistors, and M5 power connectors.

FET, MOSFET Arrays Feature Summary

Integrated SiC Schottky diodes with zero reverse recovery and zero forward recovery characteristics
Kelvin source configuration provided for simplified gate drive circuitry
Internal NTC thermistor included for precise junction temperature monitoring
Aluminum Nitride substrate utilized to enhance thermal dissipation performance

FET, MOSFET Arrays Applications

Power factor correction systems
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision A against your design requirements before ordering. Confirm that the M5 terminal torque specifications align with your assembly equipment capabilities. Ensure electrostatic discharge handling protocols are strictly followed during installation. Cross-reference the isolation voltage ratings with your system safety standards. Validate thermal management solutions against the specified junction-to-case resistance values.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and low switching losses. The integrated Schottky diode eliminates body diode reverse recovery issues common in standard MOSFETs. Consider the thermal impedance curves when designing heatsinking for continuous high-current loads. Verify that the gate drive voltage limits accommodate the specified -10V to +23V range. Evaluate the package weight and dimensions for mechanical integration constraints.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's silicon carbide power module portfolio, specifically engineered for Vienna rectifier topologies. It represents a discrete semiconductor solution combining MOSFET and diode technologies on a single substrate. The SP6L package variant provides electrical isolation suitable for high-power conversion stages. It targets efficiency improvements in industrial and commercial power electronics.