MSCSM70VR1M10CTPAG

$680.86

Description：MOSFET 6N-CH 700V 238A
Series：-

SKU:abec29d32d33 Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MSCSM70VR1M10CTPAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 6N-CH 700V 238A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MSCSM70VR1M10CTPAG

Description：MOSFET 6N-CH 700V 238A
Series：-
Mfr：Microchip Technology
Package：Tube
Technology：Silicon Carbide (SiC)
Configuration：6 N-Channel (Phase Leg)
FET Feature：-
Drain to Source Voltage (Vdss)：700V
Current - Continuous Drain (Id) @ 25°C：238A (Tc)
Rds On (Max) @ Id, Vgs：9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id：2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：9000pF @ 700V
Power - Max：674W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MSCSM70VR1M10CTPAG

MSCSM70VR1M10CTPAG

FET, MOSFET Arrays Overview

The MSCSM70VR1M10CTPAG is a triple Vienna rectifier silicon carbide power module rated at 700V and 238A. It integrates SiC MOSFETs with low RDS(on) of 9.5 mΩ and SiC Schottky diodes with zero reverse recovery. The device features an internal NTC thermistor, Kelvin source connections, and an Aluminum Nitride substrate for thermal management. Operating junction temperature ranges from -40°C to 175°C.

FET, MOSFET Arrays Feature Summary

SiC Schottky diodes provide zero reverse and forward recovery with positive temperature coefficient on forward voltage.
Internal NTC thermistor enables precise temperature monitoring.
Kelvin source terminals facilitate simplified gate drive circuitry.
Aluminum Nitride substrate ensures improved thermal performance.

FET, MOSFET Arrays Applications

Power factor correction
Switched mode power supplies
Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision (DS00004710A) and confirm package dimensions against SP6-P specifications before integration. Ensure electrostatic discharge handling procedures are strictly followed during assembly. Confirm mounting torque requirements for M6 screws to maintain proper thermal interface integrity.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency applications requiring low stray inductance and high efficiency. The integrated SiC technology supports direct heatsink mounting with electrical isolation. Verify that the continuous drain current rating aligns with the specific thermal conditions of the target application design.

FET, MOSFET Arrays Part Context

This component belongs to Microchip's triple Vienna rectifier series designed for high-power conversion. It utilizes Silicon Carbide technology to achieve superior switching performance compared to traditional silicon devices. The module architecture consolidates multiple power switches into a single isolated package for compact system designs.