MSCSM70VR1M19C1AG

FET, MOSFET Arrays Overview

The MSCSM70VR1M19C1AG is a Vienna rectifier silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates N-channel SiC MOSFETs and SiC Schottky diodes within an isolated SP3F package designed for screw mounting. The device features a drain-source voltage rating of 700 V and a continuous drain current of 124 A at 25 °C case temperature. Key electrical parameters include a typical on-resistance of 19 mΩ, a gate threshold voltage of 1.9 V to 2.4 V, and a maximum operating junction temperature of 175 °C. The module utilizes an Aluminum Nitride substrate for thermal management.

FET, MOSFET Arrays Feature Summary

• Integrates low RDS(on) SiC MOSFETs with high-speed switching capabilities and ultra-low loss characteristics.
• Incorporates SiC Schottky diodes featuring zero reverse recovery, zero forward recovery, and positive temperature coefficient on forward voltage.
• Utilizes an Aluminum Nitride substrate to provide improved thermal performance and low junction-to-case thermal resistance.
• Includes Kelvin source connections to facilitate easy drive circuit implementation.

FET, MOSFET Arrays Applications

• Power factor correction
• Switched mode power supplies
• Uninterruptible power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact configuration details. Ensure electrostatic discharge handling procedures are strictly followed during installation. Confirm that terminal shorting requirements for pins 1/2, 4/5, 7/8, and 9/10 are met in the final assembly design. Cross-reference the datasheet revision history to ensure compatibility with current manufacturing standards.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high-frequency operation and high-efficiency rectification. Consider the 700 V rating and 124 A current capacity relative to the specific load requirements. Evaluate the thermal management needs based on the specified junction-to-case thermal resistance. Ensure the driving circuitry supports the required gate voltage levels and switching speeds.

FET, MOSFET Arrays Part Context

This component belongs to the Microchip MSCSM series of silicon carbide power modules. It is specifically engineered as a Vienna rectifier solution, combining MOSFETs and Schottky diodes in a single isolated package. The SP3F form factor allows for direct mounting to heatsinks, supporting compact designs in industrial power conversion systems.

FET, MOSFET Arrays Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume functional equivalence with other modules in the family without confirming pinout and electrical parameter alignment.

FET, MOSFET Arrays FAQ

What is the recommended junction temperature range under switching conditions?

The recommended junction temperature under switching conditions ranges from -40 °C to TJmax-25 °C.

How should the power terminals be connected regarding pin shorting?

Pins 1 and 2, pins 4 and 5, pins 7 and 8, and pins 9 and 10 must be shorted together.

What type of substrate material is used in this module?

The module uses an Aluminum Nitride (AlN) substrate to improve thermal performance.