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Product Detailed Parameters
- Description：N Channel MOSFET,150V,TO-252
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (D-Pak)
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
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Overview
The Bruckewell MSD150N60 is an N-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching applications. It features a Drain-Source Voltage (VDS) of 150 V and a maximum continuous drain current (ID) of 23 A at 25°C. The device guarantees a low on-resistance (RDS(on)) of 60 mΩ at VGS = 10 V and 70 mΩ at VGS = 4.5 V. It supports a pulsed drain current of 60 A and offers single pulse avalanche energy (EAS) up to 16.2 mJ. Operating within a junction temperature range of -55°C to +150°C, it is housed in a TO-252 package.
Feature Summary
- Advanced trench DMOS technology minimizes on-resistance while providing superior switching performance.
- Enhanced capability to withstand high energy pulses in both avalanche and commutation modes.
- Guaranteed 100% single pulse avalanche energy testing for improved reliability under inductive loads.
Applications
- Power management systems in TV converters
- Automotive electronic systems
- White LED boost converters
- DC/DC converter circuits
Procurement Notes
Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A (2022). Confirm that the physical marking matches the specified part number and that the package type corresponds to TO-252. Ensure compliance with RoHS standards as indicated in the documentation before integration into designs.
Selection Notes
Select this component for applications requiring robust avalanche energy handling and fast switching speeds. The 150 V rating suits intermediate voltage DC/DC conversion tasks. Evaluate thermal constraints carefully, as power dissipation drops significantly from 3.8 W at 25°C ambient to 2.5 W at 75°C ambient due to the 150°C maximum junction limit.
Part Context
This device belongs to the Bruckewell N-Channel MOSFET family, specifically engineered using trench DMOS architecture. It targets high-efficiency power management sectors where minimizing conduction losses and managing rapid switching transients are critical design requirements.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the guaranteed single pulse avalanche energy (EAS)?
The MSD150N60 guarantees 100% EAS testing, with a maximum rating of 16.2 mJ under conditions of VDD=25V, L=0.1mH, and IAS=18A.
How does the on-resistance vary with gate-source voltage?
The RDS(on) is specified as 60 mΩ maximum at VGS = 10 V and increases to 70 mΩ maximum at VGS = 4.5 V, both tested at ID = 10 A or 4.5 A respectively.
