Single Bipolar Transistors MSD42WT1G product image

MSD42WT1G

$0.20
  • Description:TRANS NPN 300V 0.15A SC70-3
  • Series:-

SKU:64d1a75f9e76 Category: Brand:

  
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MSD42WT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.15A SC70-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MSD42WT1G

  • Description:TRANS NPN 300V 0.15A SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
  • Power - Max:150 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MSD42WT1G

MSD42WT1G

Single Bipolar Transistors Overview

The MSD42WT1G is an NPN silicon general-purpose high voltage transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 300 V and a maximum collector-base voltage (VCBO) of 300 V. The device supports a continuous DC collector current of 150 mA with a power dissipation rating of 150 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 25, a collector-emitter saturation voltage of 500 mV, and an emitter-base voltage (VEBO) of 6 V. It operates within a temperature range of -55°C to +150°C and is housed in an SC-70-3 surface-mount package.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 300 V breakdown ratings for collector-emitter and collector-base configurations
  • General-purpose design suitable for switching and amplification applications
  • Compact SC-70-3 surface-mount package optimized for space-constrained PCB layouts

Single Bipolar Transistors Applications

  • High voltage switching circuits
  • General purpose amplification stages
  • Consumer electronics control logic

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision when sourcing, as onsemi has published multiple versions including Rev. 7 and Rev. 11. Confirm that the component matches the SC-70-3 package outline and standard pinout configuration. Ensure compliance with RoHS directives if required for your assembly process. Cross-reference part numbers carefully to distinguish between variants with identical base specifications but different suffixes or manufacturing origins.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation in a small footprint. The 300 V rating allows it to handle significant potential differences compared to standard low-voltage transistors. Consider the 150 mA current limit and 150 mW power dissipation when designing thermal management strategies. The low saturation voltage aids in efficiency during saturated switching operations.

Single Bipolar Transistors Part Context

This part belongs to the MSD42 series of NPN high voltage transistors from onsemi. It serves as a surface-mount alternative to through-hole high voltage devices, maintaining similar electrical performance in a smaller form factor. The series is designed for general-purpose applications where high voltage handling is critical but board space is limited.

Single Bipolar Transistors Replacement Considerations

MSD42SWT1G is a documented substitute within the same manufacturer portfolio.

MSD42WT1GMSD42WT1G
$0.20
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