MSH60N021

Overview

The MSH60N021 is an N-channel Power MOSFET utilizing advanced Trench technology, designed for low on-resistance and gate charge. It features a Drain-Source Voltage (VDS) of 60 V and a maximum Gate-Source Voltage (VGS) of ±25 V. The device guarantees a static Drain-Source On-Resistance (RDS(on)) of 2.1 mΩ at VGS = 10 V and ID = 20 A. Continuous Drain Current (ID) reaches 140 A at TC = 25°C and 88 A at TC = 100°C. Pulsed Drain Current (IDM) is rated at 560 A. Single Pulse Avalanche Energy (EAS) is guaranteed at 451 mJ with L = 0.1 mH. Total Gate Charge (Qg) is typically 80 nC at VDS = 30 V, ID = 70 A, and VGS = 10 V. Input Capacitance (CISS) is typically 4800 pF. The component is housed in a PDFN 5x6 package.

Feature Summary

• Advanced Trench technology provides excellent RDS(ON) combined with low gate charge for high efficiency.
• 100% EAS (Enhanced Avalanche Rating) guaranteed to ensure full function reliability under stress.
• Low Miller Charge and Low Input Capacitance support fast switching performance.
• RoHS compliant and designated as a Green Device.

Applications

• PWM (Pulse Width Modulation) control circuits
• Load Switching applications
• General purpose power switching
• Networking equipment power stages
• LED driver applications

Procurement Notes

Verify the specific revision level against the manufacturer's latest documentation before finalizing designs. Confirm that the PDFN 5x6 package dimensions align with the target PCB footprint, specifically checking the lead length (L) and body width (E). Ensure thermal management strategies account for the junction-to-ambient resistance rating provided in the datasheet to maintain safe operating temperatures during continuous operation.

Selection Notes

Select this component when a 60 V rating is sufficient and low conduction losses are critical. The 2.1 mΩ RDS(on) makes it suitable for high-current applications requiring efficient heat dissipation. Consider the 140 A continuous current capability for robust load handling. Verify that the gate drive voltage can reach 10 V to achieve the specified minimum on-resistance. The avalanche energy rating supports applications with potential inductive loads or transient spikes.

Part Context

This part belongs to Bruckewell Technology Corporation's lineup of N-channel MOSFETs. It utilizes Trench technology to optimize the trade-off between on-resistance and switching speed. The device is manufactured to meet RoHS standards and green product requirements, indicating compliance with environmental regulations regarding hazardous substances in electronic components.

Replacement Considerations

No public substitute part numbers are documented in the source material.

FAQ

What is the maximum single pulse avalanche energy (EAS) guaranteed for this device?

The MSH60N021 guarantees a single pulse avalanche energy of 451 mJ when tested with an inductance of 0.1 mH and a current of 95 A.

How does the package type affect thermal performance?

The device uses a PDFN 5x6 package with a maximum junction-to-case thermal resistance (RθJC) of 1.12 °C/W. Proper heatsinking to the case is recommended to manage the 112 W power dissipation rating at 25°C case temperature.

Is the gate threshold voltage fixed?

No, the gate threshold voltage (VGS(th)) has a range. The typical value is 2.6 V, with a minimum of 2.0 V and a maximum of 4.0 V when tested at VDS = VGS and ID = 250μA.