MSH60N04

$0.46

Description：N Channel MOSFET,60V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:bc356ea9d4d8 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：N Channel MOSFET,60V,DFN5X6
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5060-8
Package / Case：8-PowerVDFN

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MSH60N04

Overview

The Bruckewell MSH60N04 is an N-Channel MOSFET utilizing advanced Trench technology to deliver low on-resistance and gate charge. It features a 60V drain-source voltage rating, a continuous drain current of 42A at 25°C case temperature, and a maximum junction temperature of 150°C. The device operates in a PDFN 5x6 package with a thermal resistance (junction-to-case) of 2.1°C/W. Electrical characteristics include a static drain-source on-resistance of 13.5mΩ at VGS=10V and a total gate charge of 40nC.

Feature Summary

Advanced Trench technology for optimized RDS(ON) and low gate charge
Guaranteed 100% single pulse avalanche energy testing
RoHS compliant and Green Product certified

Applications

Motor Drive
Power Tools
LED Lighting

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the PDFN 5x6 package dimensions and marking align with your PCB layout requirements. Ensure that thermal management solutions account for the specified junction-to-ambient and junction-to-case thermal resistances under actual operating conditions.

Selection Notes

Select this component when designing circuits requiring a 60V N-Channel MOSFET with high current handling capabilities up to 42A. Consider its low Miller charge and input capacitance for efficient PWM switching applications. Evaluate the thermal performance based on the 60W power dissipation limit at a 25°C case temperature to ensure reliable operation within the -55°C to +150°C junction temperature range.

Part Context

The MSH60N04 belongs to the Bruckewell Technology Corporation line of power semiconductors. Published as Rev. A in 2020, it is designed for general-purpose switching applications. The device integrates robust avalanche energy ratings and complies with environmental standards, positioning it as a standard solution for compact power electronics designs requiring high efficiency and reliability.