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Product Detailed Parameters
- Description：P Channel MOSFET,30V,DFN3X3
- Series：*
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN3333-8
- Package / Case：8-PowerVDFN
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Overview
The MSHM30P50 is a P-channel trench MOSFET designed for synchronous buck converter applications. It features an extreme high cell density structure that delivers excellent RDS(ON) and gate charge performance. The device operates with a drain-source voltage of -30 V and supports a continuous drain current of -50 A at 25°C case temperature. Key electrical parameters include an on-resistance of 8.7 mΩ at VGS = -10V, a total gate charge of 30 nC, and a single pulse avalanche energy rating of 125 mJ. It is housed in a PDFN 3.3x3.3 package.
Feature Summary
- High-performance trench technology providing low on-resistance and gate charge
- Superior CdV/dt effect decline characteristics
- Guaranteed 100% EAS reliability testing
Applications
- Motherboard (MB) power stages
- Video Graphics Array (VGA) circuits
- Voltage Regulator Modules (VRM)
- Point-of-Load (POL) converters
- LED driver applications
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the PDFN 3.3x3.3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your operating conditions.
Selection Notes
Select this component for designs requiring efficient synchronous rectification in low-voltage, high-current environments. The low gate charge facilitates faster switching speeds, reducing dynamic losses. Evaluate the thermal dissipation capabilities relative to your system's ambient temperature constraints to ensure operation within the maximum junction temperature limits.
Part Context
This part belongs to Bruckewell's P-channel MOSFET lineup, utilizing advanced trench technology to optimize cell density. The series targets modern power conversion architectures where efficiency and compact form factors are critical. It integrates robust avalanche energy handling to enhance system reliability during transient events.
Replacement Considerations
Cross-reference pinouts and thermal characteristics when substituting similar P-channel MOSFETs. Verify that alternative components meet or exceed the required -30 V breakdown voltage and -50 A continuous current ratings. Ensure compatible gate threshold voltages for proper logic-level driving.
