MSJB17N80-TP

Single FETs, MOSFETs Overview

The MSJB17N80-TP is an N-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in a D2PAK-3 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 17 A at case temperature. The device features a maximum on-resistance (Rds(on)) of 290 mΩ at 10 V gate drive. Additional parameters include a gate charge of 56 nC, a threshold voltage of 4 V, and a power dissipation rating of 181 W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 800 V drain-source breakdown for robust switching applications
• Low on-resistance design to minimize conduction losses and improve efficiency
• Surface-mount D2PAK packaging optimized for thermal performance and PCB integration

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and manufacturer lot codes against official Micro Commercial Components documentation before procurement. Ensure that the requested component matches the exact D2PAK-3 package dimensions and pinout configuration required by your design. Cross-reference datasheet revisions to confirm parameter consistency, as manufacturing updates may occur without prior notice.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling in a compact form factor. The 800 V rating provides significant safety margin for industrial mains or battery systems. Evaluate thermal management requirements carefully, as the 181 W dissipation rating assumes adequate heatsinking. Compare Rds(on) values against alternative packages if lower resistance is critical for efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the MSJB series of N-channel MOSFETs from Micro Commercial Components. The series focuses on high-voltage power switching solutions using advanced silicon planar technology. These components are engineered for reliability in demanding power electronics environments, offering a balance between voltage withstand capability and low on-state resistance.

Single FETs, MOSFETs Replacement Considerations

Consult official MCC substitution guides for verified equivalents. Generic replacements must match the 800 V Vds, 17 A Id, and D2PAK-3 package constraints. Verify that any substitute maintains compatible gate charge and threshold voltage levels to ensure proper driver interface compatibility.