MSP60P40

$0.54

Description：P Channel MOSFET,60V,TO-220
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)

SKU:71e41910b147 Category: Single FETs, MOSFETs Brand: Bruckewell

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Product introduction

Product Detailed Parameters

Description：P Channel MOSFET,60V,TO-220
Series：*
Mfr：Bruckewell
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：35mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

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MSP60P40

Overview

The MSP60P40 is a P-Channel MOSFET utilizing trench DMOS technology, designed for high efficiency and fast switching. It features a -60V drain-source voltage rating and a continuous drain current of -40A at 25°C case temperature. The device offers an on-resistance of 35mΩ at VGS=-10V and supports -4.5V gate drive applications. It includes 100% avalanche energy testing and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Trench DMOS technology minimizes on-resistance and enhances switching performance.
Capable of withstanding high energy pulses in avalanche and commutation modes.
Optimized for direct compatibility with -4.5V logic gate drive signals.

Applications

Point-of-load (POL) power conversion
High-side load switching
LED driver circuits

Procurement Notes

Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A-2023. Confirm that the package matches the TO-220 physical dimensions provided in the specification sheet. Ensure the ordering suffix aligns with the manufacturer's standard packing configuration before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust avalanche energy handling and low conduction losses. The specified thermal resistance values are critical for calculating heat dissipation requirements. Verify that the application voltage does not exceed the -60V breakdown limit under all transient conditions.

Part Context

This part belongs to the Bruckewell P-Channel MOSFET series. It utilizes advanced trench DMOS architecture to achieve superior switching characteristics compared to conventional planar technologies. The device is manufactured to meet RoHS compliance standards and green product requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching electrical parameters such as voltage ratings, current capacity, and package type.