MSQ30P40D

Overview

The MSQ30P40D is a dual P-channel MOSFET featuring high cell density for synchronous buck converter applications. It operates with a drain-source voltage of -30V and continuous drain current of -6A at 25°C. The device guarantees an on-resistance of 30mΩ at VGS=-10V and 40mΩ at VGS=-4.5V. Key electrical parameters include a gate threshold voltage range of -1.0V to -2.5V, total gate charge of 11.4nC, and input capacitance of 1220pF. It supports single pulse avalanche energy up to 45mJ and functions within a junction temperature range of -55°C to +150°C.

Feature Summary

• Super low gate charge for efficient switching
• Excellent CdV/dt effect decline
• 100% EAS guaranteed reliability

Applications

• MB / VGA / Vcore power stages
• POL Applications
• Load Switch
• LED Applications

Procurement Notes

Verify the component against the official Bruckewell Technology Corporation datasheet Rev. A (2022). Confirm that the package type matches SOP-8 and check for RoHS compliance status. Ensure the supplier provides valid traceability documentation matching the publication order number. Validate that the received parts meet the specified absolute maximum ratings before integration into the circuit design.

Selection Notes

Select this component for synchronous buck converters requiring low RDS(ON) and fast switching speeds. Consider the 30V rating and -6A continuous current capability for load switch or POL designs. Evaluate thermal performance using the 85°C/W junction-to-ambient resistance in SOP-8 packaging. Verify compatibility with control signals operating at -4.5V or -10V gate drive levels.

Part Context

This part belongs to the Bruckewell trench P-channel MOSFET family designed for high-performance power management. It utilizes extreme high cell density technology to optimize both on-resistance and gate charge characteristics. The dual configuration allows for compact implementation in multi-phase or bridge topologies common in modern electronic systems.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum single pulse avalanche energy?

The MSQ30P40D supports a maximum single pulse avalanche energy of 45 mJ under test conditions of VDD=-25V, IAS=-6A, and L=0.1mH.

How does the on-resistance vary with gate-source voltage?

The typical RDS(ON) is 30mΩ when VGS is -10V and increases to 40mΩ when VGS is reduced to -4.5V.