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Product Detailed Parameters
- Description：DIODE MOD GP 1200V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT100120D is a silicon standard recovery diode module from the MSRT100 series, manufactured by GeneSiC Semiconductor. It features a three-tower isolation package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage (VRRM) of 1200 V and an average forward current (IF(AV)) of 100 A per leg. Key electrical parameters include a maximum instantaneous forward voltage of 848 mV at 100 A and 25 °C, and a peak forward surge current (IFSM) of 2000 A. The module operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- High surge capability for robust transient handling
- Isolation type package with electrically isolated base plate
- Not ESD sensitive design
Applications
- Industrial power conversion systems
- Inverter circuits
- DC-DC converter modules
Procurement Notes
Verify the specific part number suffix against official datasheets to confirm exact voltage ratings and thermal characteristics. Confirm mounting requirements and terminal configurations prior to integration. Ensure compliance with RoHS directives if applicable. Check for any regional shipping restrictions or documentation requirements before ordering.
Selection Notes
Select this component for applications requiring high voltage blocking capabilities up to 1200 V and moderate current handling. Consider the thermal resistance and operating temperature range when designing heat dissipation solutions. Evaluate the surge current rating against potential circuit transients to ensure reliability under dynamic load conditions.
Part Context
This module belongs to the MSRT100 series of silicon standard recovery diodes. The series includes variants with different voltage ratings, such as 1400 V and 1600 V options. These modules are designed for general-purpose rectification in power electronics, offering a balance of performance and isolation in a compact three-tower package format.
Replacement Considerations
Direct substitutes within the same series include MSRT100140D and MSRT100160D, which offer higher voltage ratings but similar current capacities. Verify pin compatibility and thermal interface requirements when considering alternative models from other manufacturers.
