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Product Detailed Parameters
- Description：DIODE MOD GP 1600V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MSRTA200160AD is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 1600 V and an average forward current of 200 A per leg. It features a heavy three tower package with an electrically isolated base plate. The maximum thermal resistance from junction to case is 1.1 °C/W, and the device operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Heavy three tower package design
- Electrically isolated base plate
- High surge capability
Applications
- Industrial power conversion systems
- Inverter circuits
- Motor drive applications
Procurement Notes
Verify the specific datasheet version and manufacturer documentation before integration. Confirm that the 1600 V rating aligns with system requirements. Ensure proper mounting torque and thermal interface materials are used to maintain the specified thermal resistance. Check for any regional shipping restrictions or export control requirements associated with this component.
Selection Notes
Select this module when high voltage blocking capability and robust surge performance are required in a compact form factor. The isolated base plate simplifies heatsinking and electrical isolation strategies. Consider the 1.1 °C/W thermal resistance for heat dissipation planning. Evaluate the 3000 A peak surge current rating against potential fault conditions in the target application circuit.
Part Context
This component belongs to the MSRTA200 series of silicon standard recovery diodes. The series includes variants with different voltage ratings ranging from 1200 V to 1600 V. All models share the same 200 A current rating and heavy three tower package structure, providing a consistent mechanical footprint across the voltage range.
Replacement Considerations
Other models in the MSRTA200 series, such as MSRTA200120D or MSRTA200140D, offer lower voltage ratings but identical current and package specifications. Verify that the reduced voltage rating of substitutes meets the circuit's peak reverse voltage requirements.
