RF Diode MSS25-143-H27 product image

MSS25-143-H27

  • Description:RF DIODE SCHOTTKY 3V 150MW H27
  • Series:MSS25-xxx-x

SKU:b4e318223492 Category: Brand:

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MSS25-143-H27 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 3V 150MW H27. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSS25-143-H27

  • Description:RF DIODE SCHOTTKY 3V 150MW H27
  • Series:MSS25-xxx-x
  • Mfr:MACOM Technology Solutions
  • Package:Bag
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:-
  • Capacitance @ Vr, F:0.1pF @ 200mV, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):150 mW
  • Operating Temperature:-65°C ~ 150°C
  • Package / Case:H27
  • Supplier Device Package:H27
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MSS25-143-H27

MSS25-143-H27

RF Diode Overview

The MACOM MSS25-143-H27 is a P-type silicon Schottky detector optimized for superior 1/f noise performance. It requires a small forward bias of 5 to 50 µA for microwave detection at power levels below -30 dBm and functions as a zero-bias detector at higher powers. Key electrical specifications include a typical forward voltage of 260 mV (max 300 mV) at 1 mA, junction capacitance of 0.08 pF (max 0.10 pF), and dynamic resistance of 60 Ω (max). The device supports frequencies up to 26 GHz and operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Optimized for superior 1/f noise on P-type silicon epitaxial substrate
  • Better temperature stability than zero bias configurations
  • Low barrier height design with silicon nitride passivation

RF Diode Applications

  • Microwave detectors requiring low noise performance
  • Small power level signal detection below -30 dBm
  • High power zero bias detection applications

RF Diode Procurement Notes

Verify the specific suffix H27 against official documentation to confirm package type and availability. Contact authorized distributors or the manufacturer directly for current supply status and ordering requirements. Ensure compliance with MACOM's terms regarding product use and liability limitations before procurement.

RF Diode Selection Notes

Select this component when low 1/f noise and stable temperature characteristics are critical for microwave detection. Consider the required forward bias range and operating frequency limits relative to the 26 GHz maximum rating. Evaluate thermal management needs given the 150 mW power dissipation limit and high operating temperature capability.

RF Diode Part Context

This part belongs to the MSS25-xxx-x Series of P-type silicon Schottky detectors manufactured by MACOM Technology Solutions Inc. The series offers various models with different electrical characteristics and outlines, including chip, beam lead, and packaged options, all sharing the core technology of optimized 1/f noise performance.

RF Diode Replacement Considerations

Consult the official datasheet for alternative models within the MSS25 series that match specific electrical parameters such as forward voltage, junction capacitance, and dynamic resistance. Verify compatibility with existing circuit designs and mounting requirements before substituting.

MSS25-143-H27MSS25-143-H27

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