MSS30-254-E30

RF Diode Overview

The MACOM MSS30-254-E30 is a packaged single-junction low barrier silicon Schottky diode from the MSS30 series. It features a typical forward voltage of 0.25 V and a minimum breakdown voltage of 2 V. The device exhibits a typical junction capacitance of 0.22 pF with a maximum of 0.25 pF, measured at 1 MHz and 0 V reverse bias. Electrical characteristics include a typical series resistance of 3 Ω and a maximum differential resistance of 12 Ω. The component supports a rated reverse voltage of 2 V, a forward current of 50 mA, and power dissipation up to 100 mW per junction at 25°C. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

• Utilizes proprietary fabrication processes on N-type epitaxial substrates to achieve industry-leading figure of merit (FCO) values for mixer applications.
• Offers optimized performance for local oscillator (LO) power levels ranging from -3 dBm to +3 dBm per diode.
• Provides matching options for forward voltage (VF), series resistance (RD), and junction capacitance (CJ) to ensure circuit consistency.

RF Diode Applications

• RF mixer circuits requiring high conversion efficiency
• Wireless communication systems operating in microwave frequencies
• Test and measurement instrumentation

RF Diode Procurement Notes

Verify the specific package outline and electrical tolerances against the official MACOM datasheet DC-0011414 before integration. Confirm that the operating conditions remain within the absolute maximum ratings, particularly regarding power dissipation derating above 25°C. Ensure compatibility with the intended PCB footprint for the E30 package style.

RF Diode Selection Notes

Select this model when a packaged single-junction configuration is required rather than chip or beam lead formats. The MSS30-254 variant provides a balance of low capacitance and moderate forward voltage suitable for general-purpose mixing. Compare the 0.22 pF typical capacitance against higher-speed requirements if operation exceeds standard frequency bands.

RF Diode Part Context

This component belongs to the MSS30-xxx-x Series of low barrier silicon Schottky diodes manufactured by MACOM Technology Solutions. The series encompasses various configurations including single junctions, anti-parallel pairs, and ring quads in chip, beam lead, and packaged forms. The MSS30-254-E30 specifically denotes a single junction device in the E30 package.

RF Diode Replacement Considerations

Other members of the MSS30 series, such as MSS30-248-E30 or MSS30-242-E30, offer different capacitance and resistance profiles while maintaining the same E30 package. Verify that alternative part numbers match the required FCO and physical dimensions for direct substitution.