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MSS40-448-E45R is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 3V 100MW E45. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MSS40-448-E45R
- Description：RF DIODE SCHOTTKY 3V 100MW E45
- Series：MSS40-xxx-x
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Schottky - 1 Bridge
- Voltage - Peak Reverse (Max)：3V
- Current - Max：50 mA
- Capacitance @ Vr, F：0.3pF @ 0V, 1MHz
- Resistance @ If, F：7Ohm @ 5mA, 1MHz
- Power Dissipation (Max)：100 mW
- Operating Temperature：-65°C ~ 150°C
- Package / Case：E45
- Supplier Device Package：E45
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MSS40-448-E45R
RF Diode Overview
The MSS40-448-E45R is a packaged medium barrier silicon Schottky diode from the MSS40 series, configured as a ring quad. It operates with a typical forward voltage of 0.40 V and a minimum breakdown voltage of 3 V. The device features a typical junction capacitance of 0.12 pF and a maximum reverse resistance of 17 Ω. Its typical cut-off frequency is 190 GHz. Electrical ratings include a rated reverse voltage of 3 V, a forward current of 50 mA, and a power dissipation of 100 mW per junction at 25°C. The operating temperature range spans from -65°C to +150°C.
RF Diode Feature Summary
- Fabricated on N-type epitaxial substrates using proprietary processes for high FCO performance.
- Optimized mixer performance achieved with LO power between 0 dBm and +6 dBm per diode.
- Available with Hi-Rel screening options per MIL-PRF-19500 and MIL-PRF-38534 standards.
RF Diode Applications
- RF mixer circuits
- High-frequency detection applications
- Broadband signal processing
RF Diode Procurement Notes
Verify the specific package outline E45 against the official datasheet before integration. Confirm that the ordering suffix R indicates the standard reel packaging format provided by the manufacturer. Ensure compliance with the absolute maximum ratings regarding thermal derating above 25°C. Check for any recent Product Change Notifications (PCN) affecting assembly sites or testing procedures.
RF Diode Selection Notes
Select this component when a ring quad configuration is required for balanced mixer topologies. Compare the 0.12 pF junction capacitance and 190 GHz cut-off frequency against circuit requirements. Evaluate the 50 mA forward current rating against expected signal levels. Consider the -65°C to +150°C operating range for environmental suitability.
RF Diode Part Context
This part belongs to the MSS40-xxx-x Series of medium barrier silicon Schottky diodes. The series includes chip, beam lead, and packaged devices with various configurations such as single junction, tee, and ring quad. The MSS40-448 variant specifically denotes the ring quad topology within this family.
RF Diode Replacement Considerations
MSS40-455-E45 offers similar characteristics with different capacitance and resistance values.
RF Diode FAQ
What is the recommended LO power for optimal mixer performance?
Optimum mixer performance is obtained with an LO power of 0 dBm to +6 dBm per diode.
How does power dissipation change with temperature?
Power dissipation is rated at 100 mW per junction at TA = 25°C and must be derated linearly to 0 at TA = +150°C.
Is Hi-Rel screening available for this component?
Yes, Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 is available for this series.
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