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The MT3S20P(TE12L,F) is a silicon NPN RF bipolar junction transistor designed for VHF and UHF band applications. It operates with a collector-emitter breakdown voltage of 12V and supports a maximum continuous collector current of 2A. The device delivers a typical gain of 16.5dB and maintains a low noise figure of 1.45dB at 1GHz. It features a PW-Mini-3 surface-mount package, enabling compact circuit integration. The component is rated for a maximum junction temperature of 150°C and complies with RoHS standards.
Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Ensure that the procurement channel provides documentation confirming compliance with RoHS directives. Cross-reference the part number against the manufacturer's official obsolescence status to confirm active production availability before finalizing orders.
Select this component for designs requiring high linearity and minimal noise addition in the VHF and UHF spectrum. The 12V breakdown rating dictates the maximum supply voltage limits. Consider the thermal management requirements associated with the PW-Mini-3 package when designing the PCB layout for adequate heat dissipation.
This transistor belongs to Toshiba's specialized RF Bipolar Transistor series engineered for high-frequency performance. It utilizes advanced silicon planar technology to achieve superior noise characteristics compared to standard general-purpose transistors. The PW-Mini-3 form factor aligns with modern surface-mount assembly trends for consumer electronics and communication hardware.
Direct substitutes include the MT3S20P without the trailing suffix or variants within the same PW-Mini-3 family such as the MT3S20P(TE12L). Verify pinout compatibility and electrical parameter tolerances when transitioning between different manufacturing batches or equivalent models from other suppliers.