MT57W512H36JF-5

Memory IC Overview

The MT57W512H36JF-5 is a 512K x 36 Double Data Rate (DDR) SRAM manufactured by Micron Technology. It features a pipelined architecture and operates with a maximum access time of 0.5 ns. The device utilizes a 165-pin Thin Profile Ball Grid Array (TBGA) package measuring 13 mm by 15 mm with a 1 mm pitch. It supports synchronous operation modes and is designed for high-speed data processing applications requiring low latency.

Memory IC Feature Summary

• Double data rate operation on read and write ports
• Pipelined architecture for reduced latency
• Separate independent read and write data ports

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure
• Industrial automation systems

Memory IC Procurement Notes

Verify the specific speed grade suffix, as the provided documentation references the -6 variant. Confirm RoHS compliance status, as related Micron QDR/DDR SRAMs in this family may be non-compliant. Ensure the 165-pin FBGA footprint matches the target PCB design constraints before procurement.

Memory IC Selection Notes

Select this component when concurrent read/write operations are required to maximize bus utilization. The DDR interface allows for higher throughput compared to standard synchronous SRAMs. Verify that the system clock frequencies align with the device's timing specifications for reliable data coherency.

Memory IC Part Context

This part belongs to Micron's DDR SRAM portfolio, distinct from their QDR SRAM lines which feature dual output clocks. It shares the 165-pin TBGA form factor with other 512Kx36 devices in the series but differs in internal control logic and clocking schemes tailored for single-clock edge triggering.

Memory IC Replacement Considerations

The MT54W512H36BF-6 is a compatible QDR II alternative within the same package. Verify pin compatibility and signal integrity requirements, as QDR architectures utilize separate input and output clocks unlike the single-clock DDR approach.