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MTB6N60ET4 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 600V 6A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MTB6N60ET4
- Description：MOSFET N-CH 600V 6A
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MTB6N60ET4
FET, MOSFET Arrays Overview
The MTB6N60ET4 is a single N-channel power MOSFET manufactured by onsemi. It features a breakdown voltage of 600 V and a continuous drain current of 6 A at 25 °C. The device utilizes a TO-263AB (D2PAK) surface-mount package with an exposed tab for thermal management. Key electrical characteristics include a maximum drain-source on-resistance of 1.8 Ω at a gate-source voltage of 10 V. The component is designed for high-voltage switching applications, offering robust performance within its specified operating temperature range.
FET, MOSFET Arrays Feature Summary
- High-voltage capability suitable for demanding power switching environments
- Surface-mount construction with integrated thermal pad for efficient heat dissipation
- Low on-state resistance to minimize conduction losses during operation
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact specifications and compliance status. Ensure that the procurement channel provides authentic components with traceable manufacturing data. Cross-reference the part number with the latest datasheet revisions to avoid discrepancies in electrical parameters or packaging details.
FET, MOSFET Arrays Selection Notes
Select this component when a 600 V rating and approximately 6 A continuous current capacity are required in a D2PAK package. Evaluate the thermal resistance characteristics relative to the intended PCB layout and cooling strategy. Compare the on-resistance values against alternative devices to ensure optimal efficiency for the specific load conditions.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's family of N-channel power MOSFETs designed for general-purpose switching applications. The TO-263AB package provides a balance between current handling capability and board space efficiency. It serves as a discrete solution for medium-power conversion tasks where high voltage isolation is necessary.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for verified equivalents. Ensure any replacement matches the 600 V breakdown voltage, 6 A current rating, and TO-263AB footprint. Verify pinout compatibility and thermal performance metrics before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
