MTM763250LBF

FET, MOSFET Arrays Overview

The MTM763250LBF is a dual MOSFET component containing one N-channel and one P-channel silicon field-effect transistor in a single WSMini6-F1-B (SC-113DA) package. The N-channel device features a drain-source voltage of 20 V, a continuous drain current of 1.7 A, and a typical on-resistance of 95 mΩ at VGS = 4.0 V. The P-channel device offers a drain-source voltage of -20 V, a continuous drain current of 2.1 A, and a typical on-resistance of 300 mΩ at VGS = -4.0 V. Total power dissipation is rated at 700 mW on a ceramic substrate.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs for space-efficient circuit designs.
• Provides low drain-source on-state resistance to minimize conduction losses during switching operations.
• Compliant with RoHS standards and halogen-free requirements.

FET, MOSFET Arrays Applications

• Switching circuits
• DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as the semiconductor business was transferred from Panasonic Corporation to Nuvoton Technology Corporation Japan in September 2020. Ensure that the specific ordering suffix matches the required packaging configuration, such as embossed tape and reel quantities, before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution requiring both N-channel and P-channel logic-level switching is necessary. Verify that the operating gate-source voltage aligns with the specified thresholds for optimal on-resistance performance. Confirm thermal management capabilities against the absolute maximum ratings for total power dissipation.

FET, MOSFET Arrays Part Context

This component belongs to the basic part number series of individual N-channel and P-channel MOSFETs rated for 20 V operation. It is designed for general-purpose switching applications within the broader portfolio of discrete semiconductor devices manufactured by Nuvoton Technology Corporation Japan.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists or datasheets for equivalent dual MOSFET packages. Verify pin compatibility and electrical parameters before replacing the original component in existing designs.

FET, MOSFET Arrays FAQ

What is the physical package type for the MTM763250LBF?

The component utilizes the WSMini6-F1-B package, also designated as SC-113DA.

How are the internal terminals connected?

Pin 1 is Source FET1, Pin 2 is Gate FET1, Pin 3 is Drain FET2, Pin 4 is Source FET2, Pin 5 is Gate FET2, and Pin 6 is Drain FET1.

What is the peak drain current rating for the N-channel device?

The peak drain current for the N-channel device is 3.0 A under pulse conditions with a duty cycle of 1% or less.