MTMC8E280LBF

FET, MOSFET Arrays Overview

The MTMC8E28 is a dual N-channel silicon MOS FET designed for lithium-ion secondary battery protection circuits. It features a WMini8-F1 package with dimensions of 2.9 mm x 2.8 mm and a height of 0.8 mm. The device has a drain-source voltage (VDSS) rating of 20 V and a continuous drain current (ID) of 7.0 A. Key electrical parameters include a typical on-resistance (RDS(on)) of 15 mΩ at VGS = 4.5 V, a gate threshold voltage (VTH) ranging from 0.4 V to 1.3 V, and a power dissipation (PD) of 1.0 W. The component operates within a channel temperature range up to 150 °C.

FET, MOSFET Arrays Feature Summary

• Features industry-low on-resistance achieved through fine processing technology.
• Utilizes an ultra-miniature surface-mount package suitable for mobile device battery packs.
• Configured as a drain-common dual element structure.

FET, MOSFET Arrays Applications

• Lithium-ion secondary battery protection circuits
• Battery packs for mobile devices

FET, MOSFET Arrays Procurement Notes

Verify the current lifecycle status directly with Panasonic Electronic Components before procurement planning. The official documentation indicates that this product falls under maintenance or discontinued categories. Confirm availability and lead times through authorized distribution channels to ensure compliance with project timelines.

FET, MOSFET Arrays Selection Notes

Select the MTMC8E28 when designing compact battery protection systems requiring low conduction losses. Ensure the application circuit respects the absolute maximum ratings, particularly the 20 V drain-source voltage and 7.0 A continuous current limits. Verify thermal management requirements against the 1.0 W power dissipation rating based on the specific PCB copper area available.

FET, MOSFET Arrays Part Context

This component belongs to Panasonic's small signal silicon MOS FET portfolio. It is specifically engineered for applications demanding high efficiency in minimal space. The part utilizes advanced fine processing techniques to minimize resistance while maintaining reliability in standard electronic equipment environments.

FET, MOSFET Arrays Replacement Considerations

Consult Panasonic Electronic Components for verified substitute part numbers. Do not assume functional equivalence with other dual N-channel MOSFETs without reviewing specific datasheet parameters such as RDS(on), package dimensions, and thermal characteristics.