MUR10020CT

Overview

The GeneSiC Semiconductor MUR10020CT is a silicon super fast recovery diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 200 V and an average forward current of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 75 ns. It supports a peak forward surge current of 1500 A per leg and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• High surge capability design
• Twin Tower package configuration

Applications

• General purpose rectification
• High frequency switching applications

Procurement Notes

Verify the specific part number suffix against official documentation, as variations such as (R) indicate reversed leads. Confirm RoHS compliance status through the manufacturer's latest datasheet or product compliance reports before procurement. Ensure the supplier provides valid traceability documents for quality assurance purposes.

Selection Notes

Select this component when a 200 V rating and 100 A continuous current are required in a Twin Tower form factor. Evaluate thermal resistance requirements, noting the junction-to-case value is 1.0 °C/W per leg. Consider the 75 ns reverse recovery time suitability for the target switching frequency and circuit topology constraints.

Part Context

This module belongs to the MUR100 series, which includes variants with reverse voltages ranging from 50 V to 200 V. All members share identical physical dimensions and terminal configurations while differing in blocking voltage ratings. The series utilizes silicon technology optimized for super fast recovery performance.

Replacement Considerations

Direct substitutes include other MUR100 series variants like MUR10010CT or MUR10005CT if voltage ratings align with circuit needs. Verify lead orientation differences, particularly for parts marked with the (R) suffix, to ensure mechanical compatibility during installation.