MUR20040CT

$72.05

Description：DIODE MODULE GP 400V 100A 2TOWER
Series：-

SKU:d3055308b2b0 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 400V 100A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：400 V
Current - Average Rectified (Io) (per Diode)：100A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：90 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR20040CT

Overview

The GeneSiC Semiconductor MUR20040CT is a silicon super fast recovery diode module housed in a Twin Tower package. It features a repetitive peak reverse voltage of 400 V and an average forward current rating of 200 A per package. The device supports a peak forward surge current of 2000 A per leg with a maximum reverse recovery time of 90 ns. Operating temperatures range from -55 °C to +150 °C, and the junction-to-case thermal resistance is 0.45 °C/W.

Feature Summary

High surge current capability for robust operation under transient loads
Twin Tower package design for efficient mounting and heat dissipation
Non-ESD sensitive construction for simplified handling

Applications

High power super fast rectifier circuits
Industrial power conversion systems
Inverter and chopper applications

Procurement Notes

Verify the specific part number suffix against official documentation before procurement. Confirm that the component matches the required voltage and current ratings for the intended application. Ensure compatibility with the Twin Tower mounting style and verify thermal management requirements align with the specified junction-to-case thermal resistance values.

Selection Notes

Select this component for applications requiring high average forward current and fast switching characteristics. Consider the Twin Tower package for mechanical stability and thermal performance. Evaluate the 400 V reverse voltage rating against circuit peak reverse voltages to ensure adequate safety margins during operation.

Part Context

This component belongs to the MUR200 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the MUR20060CT. These modules are designed for high-power applications requiring reliable rectification and fast recovery times.