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The GeneSiC Semiconductor MUR30040CTR is a silicon super fast recovery diode module featuring a twin tower package. It provides an average forward current of 300 A per package and supports repetitive peak reverse voltages up to 400 V. The device exhibits a maximum reverse recovery time of 110 ns and a peak forward surge current capability of 2750 A per leg. Thermal resistance from junction to case is rated at 0.40 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.
Verify the specific part number suffix against official datasheets, as variations may exist between manufacturers or distributors. Confirm that the component matches the required voltage and current ratings for your application. Check for RoHS compliance status if environmental regulations apply. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component based on its 300 A current rating and 400 V blocking voltage requirements. Consider the twin tower package for mounting constraints and thermal performance needs. Evaluate the 110 ns reverse recovery time against switching frequency demands. Compare thermal resistance specifications with available heatsinking solutions to ensure safe operating temperatures.
This component belongs to the MUR300 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as the MUR30060CTR. These modules are designed for high-power applications requiring reliable rectification and fast switching performance in industrial environments.
MUR30060CTR offers higher voltage rating (600 V) with identical current capacity.