MUR40010CT

Overview

The GeneSiC Semiconductor MUR40010CT is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 400 A per package. It features a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current capability of 3300 A per leg. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum thermal resistance from junction to case of 0.35 °C/W per leg.

Feature Summary

• High surge current capability designed for demanding power applications
• Utilizes Twin Tower package configuration for efficient mounting
• Not sensitive to electrostatic discharge events

Applications

• Industrial motor drives
• DC-DC converters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against official GeneSiC or Navitas documentation before integration. Confirm that the Twin Tower package dimensions match the mechanical constraints of the target heatsink assembly. Ensure thermal interface materials are compatible with the specified operating temperature range up to 150 °C.

Selection Notes

Select this component when a high-current silicon rectifier with fast recovery characteristics is required. The 100 V rating suits low-voltage high-power conversion stages. Evaluate the 0.35 °C/W thermal resistance to ensure adequate cooling solutions are available for sustained 400 A operation.

Part Context

This part belongs to the MUR400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor, now under Navitas. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent current handling capabilities across the family.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may differ in thermal resistance or recovery time.