MURT10040R

MURT10040R

$65.95
  • Description:DIODE MODULE GP 400V 50A 3TOWER
  • Series:-

SKU:e271b8e8a95b Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 50A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):50A
  • Voltage - Forward (Vf) (Max) @ If:1.35 V @ 50 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):90 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT10040R

Overview

The MURT10040R is a silicon super fast recovery diode module from GeneSiC Semiconductor, rated for a repetitive peak reverse voltage of 400 V and an average forward current of 100 A per package. It features a three-tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V at 25 μA and 1.7 V at IFM = 50 A, Tj = 25 °C. The device supports a peak forward surge current of 1500 A per leg and exhibits a maximum reverse recovery time of 90 ns. Thermal resistance from junction to case is 1.0 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • High surge capability with 1500 A peak forward surge current per leg
  • Electrically isolated base plate in a three-tower isolation package
  • Super fast recovery characteristics with 90 ns maximum reverse recovery time

Applications

  • High frequency switching power supplies
  • Inverter circuits requiring fast recovery
  • DC-DC converters with high surge demands

Procurement Notes

Verify the specific voltage rating (400V vs 600V) required for your application, as the datasheet covers the MURT10040 through MURT10060 series. Confirm that the reversed leads configuration associated with the 'R' suffix matches your PCB footprint design. Ensure thermal management solutions account for the specified junction-to-case thermal resistance of 1.0 °C/W per leg to maintain operation within the -55 °C to +150 °C temperature range.

Selection Notes

Select this component when high average forward current of 100 A and low reverse recovery time are critical. The isolated base plate facilitates mounting on heatsinks without additional insulators. Consider the 1.7 V forward voltage drop at high currents for efficiency calculations. The three-tower package allows for compact designs compared to discrete components handling similar surge currents.

Part Context

This part belongs to the MURT100 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as the MURT10040 and MURT10060. The 'R' designation indicates a specific terminal configuration with reversed leads, distinguishing it from standard pinouts in the same family.

Replacement Considerations

Direct substitutes must match the 100 A current rating, 400 V reverse voltage, and 90 ns recovery time. Verify lead reversal compatibility if replacing non-R variants. Check thermal resistance and package dimensions for mechanical fit.

MURT10040RMURT10040R
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