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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：160 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURT20060R is a silicon super fast recovery diode module from the MURT20040 series, manufactured by GeneSiC Semiconductor. It features a three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 600 V and an average forward current of 200 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.7 V at 100 A and a maximum reverse recovery time of 110 ns. The junction-to-case thermal resistance is 0.45 °C/W per leg.
Feature Summary
- High surge capability with a peak forward surge current rating of 2000 A per leg
- Electrically isolated base plate for enhanced safety in power applications
- Super fast recovery characteristics suitable for high-frequency switching
Applications
- High frequency rectification in industrial power supplies
- Free-wheeling diodes in motor drives and inverters
- DC-DC converters requiring fast recovery performance
Procurement Notes
Verify the specific part number suffix against official datasheets to confirm terminal configuration, as 'R' variants may have reversed leads. Confirm compliance with RoHS directives and check for end-of-life notifications prior to procurement. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation.
Selection Notes
Select this component for applications requiring high current handling and fast switching speeds. The 600 V rating provides adequate margin for standard industrial bus voltages. Consider the three tower package for efficient heat dissipation and mounting flexibility. Verify that the operating temperature range meets the environmental requirements of the target system.
Part Context
This module belongs to the MURT20040 series of silicon super fast recovery diodes. The series offers various voltage ratings from 400 V to 600 V while maintaining a consistent 200 A average forward current capability. The MURT20060R represents the highest voltage variant in this specific current class within the family.
Replacement Considerations
Direct replacements must match the 600 V reverse voltage, 200 A current rating, and similar reverse recovery time. Verify pinout compatibility, especially regarding lead orientation if substituting non-R variants. Cross-reference thermal resistance specifications to ensure equivalent cooling requirements.
