MURT40010

MURT40010

$93.61
  • Description:DIODE MODULE GP 100V 200A 3TOWER
  • Series:-

SKU:84982984372b Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 100V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):125 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT40010

Overview

The MURT40010 is a silicon super fast recovery diode module from the MURT400 series, manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 100 V and an average forward current of 400 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 150 ns. The thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Feature Summary

  • High surge capability designed for demanding power applications
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Three tower package configuration providing robust mechanical structure

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • DC-DC converters

Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal lead orientation, as 'R' variants feature reversed leads. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications. Ensure thermal interface materials are compatible with the specified junction-to-case thermal resistance values for optimal heat dissipation performance.

Selection Notes

Select this component when high current handling and fast switching speeds are required in isolated power modules. The 100 V rating suits low-voltage high-current topologies. Evaluate the 0.35 °C/W thermal resistance against system cooling capabilities. Consider the three-tower form factor for PCB or chassis mounting constraints. Verify that the 150 ns reverse recovery time meets the circuit's switching frequency requirements without excessive losses.

Part Context

This module belongs to the MURT400 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 400 A average forward current rating. All variants share the same three-tower isolated package design, ensuring interchangeability in terms of mechanical footprint and thermal characteristics across the voltage range.

Replacement Considerations

MURT40005(R) and MURT40020(R) are confirmed substitutes within the same series offering identical current and thermal specifications with different voltage ratings.

MURT40010MURT40010
$93.61
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