MURT40040R

MURT40040R

$114.39
  • Description:DIODE MODULE GP 400V 200A 3TOWER
  • Series:-

SKU:88e3cb3a0814 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.35 V @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):180 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT40040R

Overview

The GeneSiC Semiconductor MURT40040R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 400 V and an average forward current of 400 A. It features a three-tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.35 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 180 ns. The device operates within a junction temperature range of -55 to 150 °C.

Feature Summary

  • High surge capability designed for demanding power applications
  • Three tower package configuration providing robust mechanical stability
  • Electrically isolated base plate for enhanced safety and thermal management

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • DC-DC converters

Procurement Notes

Verify the specific part number against official datasheets to confirm voltage ratings and pinout configurations. Ensure compatibility with existing thermal management systems due to the high current rating. Confirm that the supplier provides traceable documentation for quality assurance purposes before finalizing procurement orders.

Selection Notes

Select this component when high surge current handling and fast recovery characteristics are required in medium-to-high power circuits. The isolated base plate simplifies mounting on heatsinks without additional insulators. Consider the thermal resistance specifications to ensure adequate cooling solutions are implemented for reliable long-term operation under continuous load conditions.

Part Context

This component belongs to the MURT400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 400 V to 600 V while maintaining consistent current capabilities. These modules are engineered for efficiency and reliability in modern power electronics designs requiring rapid switching performance.

Replacement Considerations

Direct substitutes may include other models from the same MURT400 series with matching voltage ratings. Verify pinout orientation as 'R' suffix devices have reversed leads compared to standard versions. Cross-reference thermal resistance values to ensure equivalent heat dissipation performance in the target application.

FAQ

What is the maximum reverse recovery time for this diode?

The maximum reverse recovery time is 180 ns.

Is the base plate electrically isolated?

Yes, the module features an electrically isolated base plate.

What is the peak forward surge current rating?

The peak forward surge current is 3300 A per leg.

MURT40040RMURT40040R
$114.39
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