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The MV2101G is a silicon tuning diode from the MMBV2101LT1 Series, designed for FM radio and TV tuning applications. It operates with a maximum reverse voltage of 30 Vdc and a forward current of 200 mAdc. The device features a typical capacitance of 6.8 pF at 4.0 Vdc reverse bias, measured at 1.0 MHz. It provides a typical tuning ratio (C2/C30) of 2.7 and a figure of merit (Q) of 450 at 50 MHz. The component is housed in a TO-92 package and supports junction temperatures up to +150°C.
Verify the specific ordering suffix 'G' indicates a Pb-Free package configuration as documented in the datasheet. Confirm that the TO-92 package style matches the required pinout orientation for the target design. Ensure compliance with RoHS directives if applicable to the manufacturing region. Cross-reference the document number 98ASB42118B for the most current specifications.
Select this component when a standard 6.8 pF capacitance value is required for variable capacitance applications. The TO-92 through-hole package is suitable for designs prioritizing robust mechanical mounting over surface area constraints. Evaluate the 30 Vdc reverse voltage rating against peak circuit voltages to ensure safe operation margins are maintained under all expected conditions.
This part belongs to the MMBV2101LT1 series of Silicon Tuning Diodes manufactured by onsemi. The series includes variants such as MMBV2105 and MV2109, offering different capacitance ranges from 6.8 pF to 36.3 pF while maintaining similar electrical characteristics. These devices are engineered to provide solid-state reliability in high-volume consumer electronics requiring precise frequency control.
Direct replacements within the same series include MV2105G for higher capacitance requirements or MMBV2101LT1G for surface mount SOT-23 compatibility. Verify that substitute parts maintain the same 30 Vdc reverse voltage rating and compatible capacitance tolerances to ensure circuit performance consistency.