MV2108

MV2108

$0.31
  • Description:DIODE VAR CAP SINGLE 30V 27PF 2-
  • Series:-

SKU:b7f5b3919a77 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE VAR CAP SINGLE 30V 27PF 2-
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Capacitance @ Vr, F:29.7pF @ 4V, 1MHz
  • Capacitance Ratio:3.2
  • Capacitance Ratio Condition:C2/C30
  • Voltage - Peak Reverse (Max):30 V
  • Diode Type:Single
  • Q @ Vr, F:300 @ 4V, 50MHz
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:DO-204AA, DO-7, Axial
  • Supplier Device Package:DO-204AA

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MV2108

Overview

The MV2108 is a silicon abrupt variable capacitance diode designed for high-frequency to ultra-high-frequency applications. It features a nominal junction capacitance of 27 pF and a minimum breakdown voltage of 30 V. The device is housed in a plastic TO-92 (Case 182-02) package with two pins. It offers a maximum power dissipation of 0.28 W and maintains a minimum capacitance ratio of 2.5.

Feature Summary

  • Engineered for operation across the HF to UHF frequency bands
  • Utilizes silicon abrupt junction technology for variable capacitance control
  • Constructed in a compact, high-reliability plastic cylindrical package

Applications

  • High-frequency tuning circuits
  • Ultra-high frequency oscillator varactors
  • RF filter tuning elements

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations may exist. Confirm RoHS compliance status through manufacturer material composition reports prior to integration. Ensure the TO-92 package dimensions align with PCB layout requirements. Cross-reference the Case 182-02 designation with current datasheets to confirm pinout and mechanical specifications.

Selection Notes

Select this component when an abrupt capacitance-voltage characteristic is required for HF/UHF stability. The 27 pF nominal value suits specific resonant circuit designs. Evaluate the 30 V breakdown limit against peak reverse voltages in the application. The TO-92 package is suitable for low-power, through-hole implementations where space allows.

Part Context

This component belongs to the category of discrete semiconductor diodes, specifically varactor or variable capacitance types. Manufactured by onsemi (formerly Motorola/NXP), it serves as a passive-tunable element in RF systems. The device replaces older discrete tuning components with integrated silicon varactor solutions for consistent performance in communication hardware.

Replacement Considerations

Direct substitutes must match the 27 pF nominal capacitance, 30 V breakdown, and TO-92 package. Verify that replacement parts maintain the abrupt junction profile and similar capacitance ratios. Check for identical thermal and electrical ratings to ensure circuit compatibility without redesign.

MV2108MV2108
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