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Product Detailed Parameters
- Description：JFET N-CH 40V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 20V
- Resistance - RDS(On)：50 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18 (TO-206AA)
- Grade：Military
- Qualification：MIL-PRF-19500/431
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Overview
The MV2N4092 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a zero-gate-voltage drain current of 20 mA, a continuous drain current rating of 100 pA, and a drain-source on-resistance of 50 Ohms. The component supports a power dissipation of 360 mW and operates within a temperature range from -65 C to +175 C.
Feature Summary
- Single N-channel JFET configuration utilizing silicon technology
- Metal TO-18-3 hermetic package suitable for high-reliability environments
- Wide operating temperature range extending up to +175 C
Applications
- High-frequency analog signal amplification
- Low-noise preamplifier circuits
- Precision analog switching applications
Procurement Notes
Verify the specific datasheet revision and manufacturing lot details directly with Microchip Technology or authorized distributors before integration. Confirm that the TO-18-3 package dimensions and pinout align with the target PCB footprint. Ensure thermal management strategies accommodate the 360 mW power dissipation limit under maximum operating conditions. Validate compliance requirements against project specifications as RoHS status may vary.
Selection Notes
Select the MV2N4092 when a robust N-channel JFET with high-temperature capability is required. Compare the 20 mA zero-gate-voltage drain current against circuit biasing needs. Evaluate the 50 Ohm on-resistance for impedance matching requirements. Consider the TO-18-3 package constraints regarding board space and mounting methods compared to surface-mount alternatives.
Part Context
The MV2N4092 belongs to the 2N409x series of N-channel JFETs produced by Microchip Technology. This series is characterized by silicon construction and metal can packaging. Related variants in this family include the MV2N4091 and MV2N4093, which share similar voltage ratings and package types but differ in specific current and resistance parameters.
Replacement Considerations
Cross-reference with other manufacturers' equivalents such as the 2N4092 from Central Semiconductor or Intersil/Renesas. Verify that substitute components match the TO-18-3 package and meet the 40 V breakdown voltage and 20 mA drain current specifications.
