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Product Detailed Parameters
- Description：JFET N-CH
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MV2N4092UB/TR is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a single transistor configuration with a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical parameters include a zero-gate-voltage drain current of 8 mA, a continuous drain current rating of -100 pA, and a drain-source on-resistance of 50 Ohms. The component supports a power dissipation of 360 mW and operates within a temperature range of -65°C to +175°C.
Feature Summary
- N-channel JFET construction using silicon technology
- High thermal stability supporting operation up to 175°C
- Metal can packaging for robust environmental protection
Applications
- Low-noise amplifier circuits
- Precision analog switching applications
- High-impedance input stages
Procurement Notes
Verify the specific ordering suffix to confirm the tape-and-reel packaging format required for automated assembly processes. Ensure that the procurement documentation explicitly references the Microchip Technology manufacturer designation to guarantee authenticity. Cross-reference the part number against official distribution channels to avoid counterfeit components. Confirm RoHS compliance status if environmental regulations apply to the final product assembly.
Selection Notes
Select this component when high input impedance and low noise characteristics are critical for signal integrity. The wide operating temperature range makes it suitable for demanding industrial environments. Consider the TO-18-3 package constraints regarding board space and thermal management requirements during the design phase.
Part Context
This component belongs to the discrete semiconductor category, specifically within the JFET sub-classification under transistors. It serves as a fundamental active element in analog circuit design, providing voltage-controlled resistance properties distinct from MOSFET or BJT technologies.
Replacement Considerations
Consult official substitution guides for compatible N-channel JFETs with matching pin configurations and electrical ratings. Verify that alternative parts meet the same thermal and voltage specifications before implementation.
