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Product Detailed Parameters
- Description：JFET N-CH
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MV2N4393UB is a Silicon N-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 through-hole package configuration. Key electrical parameters include a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. The device supports a continuous drain current of 8 mA at zero gate-source voltage, with an on-resistance of 80 Ohms. Power dissipation is rated at 360 mW. Operating temperature ranges from -65°C to +175°C.
Feature Summary
- Utilizes silicon technology for robust performance in high-temperature environments
- Designed for single-channel applications requiring stable JFET characteristics
- Features a hermetically sealed TO-18-3 metal can package for durability
Applications
- High-frequency amplification circuits
- Low-noise signal processing stages
- Constant current source implementations
Procurement Notes
Verify the specific suffix designation against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides valid traceability documentation. Confirm RoHS compliance status as indicated in the product specifications prior to finalizing acquisition orders.
Selection Notes
Select this component when a ruggedized N-Channel JFET with high thermal stability is required. The TO-18-3 package suits applications needing reliable through-hole mounting. Evaluate the 40 V breakdown voltage and 360 mW power dissipation limits against circuit requirements to ensure safe operational margins under all expected load conditions.
Part Context
This part belongs to the Microchip MV2N series of junction field-effect transistors. These components are engineered for specialized analog and RF applications where low noise and high reliability are critical. The series offers various configurations to support diverse circuit design needs across industrial and aerospace sectors.
Replacement Considerations
Consult the official Microchip cross-reference guide for verified substitute part numbers. Direct replacements must match the N-Channel polarity, TO-18-3 package, and equivalent electrical ratings to maintain circuit integrity without redesign.
