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Product Detailed Parameters
- Description：JFET N-CH 30V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：100 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：6 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds：18pF @ 10V
- Resistance - RDS(On)：40 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18
- Grade：Military
- Qualification：MIL-PRF-19500/385
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Overview
The MV2N4860 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a maximum drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. It supports a continuous drain current of up to 100 mA with a power dissipation rating of 360 mW. The component operates within a temperature range from -65°C to +175°C.
Feature Summary
- Constructed using silicon JFET technology for reliable signal processing.
- Housed in a hermetically sealed TO-18-3 metal can package suitable for harsh environments.
- Designed for through-hole installation to support robust circuit board integration.
Applications
- Low-noise amplifier circuits
- High-impedance input stages
- Analog switching applications
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to ensure correct binning or testing criteria, as suffixes may denote variations not visible in general catalogs. Confirm that the TO-18-3 package style matches your PCB footprint requirements. Check for RoHS compliance status if required by your manufacturing standards, as indicated in product attributes. Ensure availability aligns with long lead times typical for specialized discrete semiconductors.
Selection Notes
Select the MV2N4860 when designing circuits requiring high input impedance and low noise characteristics in a ruggedized form factor. The TO-18-3 package offers superior thermal and environmental protection compared to plastic packages. Consider the 40 V breakdown limits and 360 mW power dissipation when determining heat sinking needs. Verify that the N-channel configuration fits the biasing requirements of your specific analog or switching topology.
Part Context
This component belongs to the Microchip Technology discrete transistor portfolio, specifically within the JFET category. It is part of a family of silicon-based field-effect transistors designed for analog and RF applications. The TO-18-3 package is a standard military-grade style often used in aerospace and defense electronics where reliability under extreme temperatures is critical.
Replacement Considerations
Consult official Microchip cross-reference guides for verified substitutes. Generic JFET replacements may differ in pinout, breakdown voltages, or noise figures. Do not assume compatibility based solely on package type; verify electrical parameters such as IDSS and VGS(off) against the original design specifications.
