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Product Detailed Parameters
- Description：JFET P-CH 30V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：25 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：6 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：27pF @ 15V
- Resistance - RDS(On)：100 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18 (TO-206AA)
- Grade：Military
- Qualification：MIL-PRF-19500
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Overview
The MV2N5116 is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a surface-mount UB-4 package and operates in depletion mode. Key electrical parameters include a drain-source breakdown voltage of -600 mV, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 4 V. The device specifies a zero-gate-voltage drain current of -25 mA and an on-resistance of unspecified ohmic value within the provided documentation.
Feature Summary
- Surface-mount construction utilizing a low-profile ceramic UB-4 package for compact integration.
- P-channel silicon JFET technology designed for small-signal applications.
- Capable of operating at maximum junction temperatures up to +200 °C.
Applications
- High-reliability military and aerospace electronic circuits
- Low-noise analog signal processing stages
- Precision voltage regulation systems
Procurement Notes
Verify that the specific ordering suffix matches the required package type and screening level. Confirm RoHS compliance status as commercial versions may differ from military equivalents. Ensure the supplier provides traceability documentation consistent with MIL-PRF-19500 requirements if high reliability is mandated for the application environment.
Selection Notes
Select this component when a P-channel JFET with a -600 mV drain-source breakdown voltage is required in a surface-mount format. The device serves as a surface-mount equivalent to the JEDEC registered 2N5116 series. Consider the -25 mA zero-gate-voltage drain current specification for biasing requirements in analog circuit designs.
Part Context
This device belongs to the 2N5114 through 2N5116 family of small-signal field-effect transistors. The MV prefix typically denotes a specific manufacturing or screening variant offered by Microchip Technology. These components are widely utilized in applications requiring robust performance under extreme thermal conditions.
Replacement Considerations
The MV2N5116 is a surface-mount equivalent to the JEDEC registered 2N5116 series. Verify pinout compatibility and electrical parameter tolerances against legacy TO-18 packaged counterparts before substitution.
