MV2N5116UB

Overview

The MV2N5116UB is a P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a low-profile UB-4 surface mount package designed for high-reliability applications. Key electrical specifications include a drain-source breakdown voltage of -600 mV and a gate-source breakdown voltage of 30 V. The device features a gate-source cutoff voltage of 4 V and a zero-gate-voltage drain current of -25 mA. It operates within a temperature range from -65 °C to +200 °C.

Feature Summary

• Surface mount equivalent to the JEDEC registered 2N5114 through 2N5116 series
• Low-profile ceramic surface mount package construction
• Screening available in reference to MIL-PRF-19500 for high reliability

Applications

• High-reliability electronic circuits requiring military screening standards
• Voltage regulation applications utilizing JFET characteristics
• Small signal field-effect transistor implementations in rugged environments

Procurement Notes

Verify the specific screening level required, as military equivalents are available under different part nomenclature referencing MIL-PRF-19500. Confirm RoHS compliance status, noting that compliant versions are typically commercial grade only. Ensure the UB-4 package dimensions match the target PCB layout constraints before finalizing procurement decisions.

Selection Notes

Select this component when a P-channel JFET with a -600 mV drain-source breakdown voltage is required in a surface mount format. The device serves as the direct surface mount counterpart to the TO-18 leaded 2N5116. Consider the extended maximum operating temperature of +200 °C for high-thermal environments where standard commercial devices may fail.

Part Context

This device belongs to the Microchip Technology discrete semiconductor family of JFETs. It is functionally identical to the through-hole 2N5116 but packaged in the UB-4 surface mount configuration. The product line includes related variants such as the MV2N5115UB, which offers higher voltage ratings and different current characteristics within the same package style.

Replacement Considerations

The MX2N5116 is the through-hole TO-18-3 equivalent. For surface mount replacements, verify if the MV2N5115UB is suitable despite its different electrical parameters (-800 mV Vds, -60 mA Idss). Direct pin-compatible substitutes require matching the specific -600 mV breakdown voltage constraint.