MW6S010GNR1

Overview

The MW6S010GNR1 is an N-channel enhancement-mode lateral MOSFET RF power device designed for base station applications up to 1500 MHz. It operates at a drain-source voltage of 28 Vdc with a maximum rating of 68 Vdc and supports junction temperatures up to 225°C. The component delivers 10 W PEP output power, achieving 18 dB power gain and 32% drain efficiency at 960 MHz. It features integrated ESD protection and on-chip RF feedback for broadband stability.

Feature Summary

• On-chip RF feedback mechanism ensures broadband stability across the operating frequency range.
• Integrated electrostatic discharge (ESD) protection enhances device reliability during handling and operation.
• Qualified for continuous operation up to a maximum drain-source voltage of 32 V.

Applications

• Class A or Class AB base station amplifier stages
• Analog and digital modulation signal amplification
• Multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix 'GNR1' against current manufacturer documentation to confirm package style and reel specifications. Confirm RoHS compliance status and moisture sensitivity level ratings prior to assembly planning. Ensure thermal management solutions support the specified 225°C junction temperature capability.

Selection Notes

Select this component for designs requiring high linearity and broadband performance in the 450-1500 MHz range. Evaluate impedance matching networks using the provided series equivalent large-signal impedance parameters. Consider the TO-270-2 gull-wing plastic package constraints for PCB layout and mounting requirements.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistor family, specifically the MW6S010N series. It is manufactured by NXP USA Inc., following the acquisition of Freescale. The device is characterized for use in wireless communication infrastructure where robust RF performance and thermal resilience are critical.

Replacement Considerations

Consult official substitution lists for compatible lateral N-channel MOSFETs within the same power class. Verify pinout compatibility and thermal resistance characteristics when considering alternative packages or manufacturers.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Does the device include built-in protection mechanisms?

Yes, the device includes integrated ESD protection and on-chip RF feedback for stability.

What is the typical power gain at 960 MHz?

The typical power gain is 18 dB at 960 MHz under standard test conditions.