MW7IC2020NT1

MW7IC2020NT1

$23.19
  • Description:RF MOSFET LDMOS 28V 24QFN
  • Series:-

SKU:d0f993ca8834 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 24QFN
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:32.6dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:40 mA
  • Power - Output:2.4W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:24-PowerQFN
  • Supplier Device Package:24-PQFN (8x8)
  • Configuration:-

Download product information

MW7IC2020NT1

Overview

The MW7IC2020NT1 is an RF LDMOS wideband integrated power amplifier designed for single-carrier W-CDMA applications. It operates from 1805 to 2170 MHz with a typical average output power of 2.4 Watts at 28 Volts. The device features on-chip matching, a multi-stage structure rated for 26 to 32 Volt operation, and covers all typical cellular base station modulation formats.

Feature Summary

  • On-chip matching provides 50 Ohm input impedance and DC blocking.
  • Integrated quiescent current temperature compensation includes enable and disable functions.
  • Built-in ESD protection ensures robustness against electrostatic discharge events.

Applications

  • Single-carrier W-CDMA driver stages
  • Cellular base station amplification
  • Broadband RF power amplification

Procurement Notes

Verify the component datasheet revision and manufacturer documentation before integration. Confirm that the T1 suffix corresponds to the required tape and reel specifications. Ensure thermal management aligns with the junction-to-case resistance values provided in the official data sheet for reliable operation.

Selection Notes

Select this component for designs requiring wideband coverage across 1805 to 2170 MHz. Evaluate thermal performance based on the specified junction-to-case resistance under CW conditions. Verify compatibility with 28 Volt supply rails and ensure gate drive circuits support the required quiescent current settings for optimal linearity.

Part Context

This part belongs to the Freescale Semiconductor RF LDMOS wideband integrated power amplifier family. It utilizes high-voltage LDMOS IC technology to integrate multiple stages into a compact PQFN package. The design targets base station applications requiring high efficiency and linearity for complex modulation schemes.

Replacement Considerations

Consult official NXP/Freescale documentation for confirmed substitute part numbers. Do not assume functional equivalence with other models without verifying pinout, electrical parameters, and thermal characteristics against the original datasheet.

FAQ

What is the operating frequency range of the MW7IC2020NT1?

The device is usable from 1805 to 2170 MHz due to its on-chip matching network.

Does the MW7IC2020NT1 include ESD protection?

Yes, the integrated circuit includes built-in ESD protection characterized by Human Body Model Class 2 and Machine Model Class A.

How is the quiescent current managed in this amplifier?

It features integrated quiescent current temperature compensation with an enable/disable function to maintain stability across temperature variations.

MW7IC2020NT1MW7IC2020NT1
$23.19
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