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Product Detailed Parameters
- Description：IGBT MODULE 1200V 29A 130W E1
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 20A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：E1
- Supplier Device Package：E1
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：29 A
- Power - Max：130 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：1.18 nF @ 25 V
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Overview
The MWI30-12E6K is a six-pack IGBT module utilizing SPT technology and HiPerFRED diodes. It features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC25) of 29 A at 25°C case temperature. The typical saturation voltage (VCE(sat)) is 2.5 V at 25°C, rising to 2.9 V at 125°C. Total power dissipation is rated at 130 W at 25°C. The module includes an integrated NTC temperature sensor with a resistance of 4.7 kΩ at 25°C. Isolation voltage is 2500 Vrms. The package is the industry-standard E1-pack with solderable pins for PCB mounting.
Feature Summary
- SPT IGBTs provide low saturation voltage, positive temperature coefficient for easy paralleling, fast switching, and short tail current optimized for resonant circuits.
- HiPerFRED diodes offer fast reverse recovery, low operating forward voltage, and low leakage current.
- Industry standard E1-pack package provides isolated copper base plate and solderable pins for PCB mounting.
Applications
- AC drives
- UPS systems
- Welding equipment
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revision status as this model is marked as phase-out. Ensure storage conditions remain within specified limits to maintain integrity before installation.
Selection Notes
Select based on 1200 V blocking capability and 29 A continuous current rating at 25°C case temperature. Consider thermal resistance values for heatsink design. Verify compatibility with required gate drive voltages and short-circuit withstand time requirements for the specific application topology.
Part Context
This component belongs to the MWI series of six-pack IGBT modules from IXYS. It integrates SPT IGBTs with HiPerFRED free-wheeling diodes in a single E1-pack housing. The module is designed for medium-power switching applications requiring high reliability and efficient thermal management.
Replacement Considerations
Check for direct pin-compatible replacements within the IXYS MWI series or equivalent SPT-based six-pack modules from other manufacturers. Verify that substitute components meet or exceed the 1200 V voltage rating and 29 A current capacity while maintaining similar thermal characteristics.
FAQ
What is the maximum short circuit safe operating area (SCSOA) duration?
The module supports a non-repetitive short circuit duration of 10 µs at VCE = 900 V and TVJ = 25°C.
What are the thermal resistance values for the IGBT junction to case?
The thermal resistance from junction to case (RthJC) per IGBT is 0.95 K/W, and from case to heatsink (RthCH) is 0.35 K/W.
Does the module include a temperature sensing element?
Yes, it includes an integrated NTC temperature sensor with a typical resistance of 4.7 kΩ at 25°C.
