MWI75-12A8T

$95.46

Description：IGBT MODULE 1200V 125A 500W
Series：-

SKU:a0d14a9b339e Category: IGBT Modules Brand: IXYS

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 125A 500W
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：NPT
Configuration：Three Phase Inverter
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 75A
Input：Standard
NTC Thermistor：No
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：125 A
Power - Max：500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：5.5 nF @ 25 V

Download product information

MWI75-12A8T

Overview

The MWI75-12A8T is a three-phase inverter IGBT module manufactured by IXYS. It features an NPT (Non-Punch Through) technology design suitable for high-power applications. The device supports a collector-emitter breakdown voltage of 1200 V and provides a continuous collector current capacity of 125 A. Thermal performance is characterized by a maximum power dissipation rating of 500 W. The component utilizes the E9PACK package configuration, facilitating screw-mount installation for robust mechanical stability and efficient heat transfer in industrial power electronics systems.

Feature Summary

Three-phase inverter topology integration
NPT silicon technology construction
E9PACK module housing format

Applications

Industrial motor drive systems
Uninterruptible power supply units
High-frequency power conversion circuits

Procurement Notes

Verify part authenticity through authorized IXYS distribution channels due to obsolete status. Confirm datasheet revisions match specific production batches. Request original manufacturer documentation to validate technical specifications against potential counterfeit components before finalizing acquisition decisions.

Selection Notes

Evaluate thermal management requirements against the 500 W dissipation limit. Ensure gate drive signals align with standard IGBT switching characteristics. Compare physical dimensions of the E9PACK housing with existing PCB or chassis layouts. Consider system voltage margins relative to the 1200 V breakdown rating for reliable operation under transient conditions.

Part Context

This component belongs to IXYS's discrete and power modules portfolio, specifically within the IGBT transistor category. The series targets medium-to-high power density applications requiring robust switching capabilities. It represents a legacy product line designed for established industrial infrastructure rather than consumer-grade electronics.