MWT-173

Overview

The MWT-173 is a GaAs FET RF MOSFET transistor from the MWT series, designed for high-efficiency amplifier and oscillator applications. It operates within a frequency range of 100 MHz to 12 GHz. Key electrical parameters include a continuous drain current rating between 240 mA and 280 mA, a drain-source breakdown voltage of 5 V, and a small-signal gain of 10 dB. The device features a die package style and supports bulk packaging formats.

Feature Summary

• Utilizes GaAs technology for robust RF performance
• Optimized for narrow and broad band linear amplification
• Suitable for high-power oscillator circuits

Applications

• Narrow band linear amplifier stages
• Broad band linear amplifier configurations
• High power oscillator designs

Procurement Notes

Verify the specific binning or grade required for your application, as the MWT-173 may have variations in current ratings (240 mA vs 280 mA) depending on the manufacturing lot. Confirm that the die package format aligns with your substrate mounting capabilities and thermal management strategy before finalizing the order.

Selection Notes

Select this component when a GaAs-based solution is preferred over silicon for frequencies up to 12 GHz. Ensure the 5 V supply voltage constraint fits your system architecture. Consider the die form factor if custom assembly is feasible, as it offers flexibility in thermal design compared to pre-packaged alternatives.

Part Context

Part of the MWT series, which focuses on RF power MOSFETs for communication infrastructure. CML Micro specializes in mixed-signal and microwave semiconductors for global communications markets, including wireless, satellite, and critical communications sectors.

Replacement Considerations

MWT-773: Similar operating frequency but different output power and resistance characteristics.