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Product Detailed Parameters
- Description：RF MOSFET MESFET 4V CHIP
- Series：-
- Mfr：CML Micro
- Package：Case
- Technology：MESFET
- Frequency：100MHz ~ 12GHz
- Gain：7dB
- Voltage - Test：4 V
- Current Rating (Amps)：230mA
- Noise Figure：2dB
- Current - Test：230 mA
- Power - Output：-
- Voltage - Rated：6 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：Die
- Supplier Device Package：Chip
- Configuration：-
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Overview
The MWT-1F is a Gallium Arsenide (GaAs) MESFET device featuring a nominal 0.25 micron gate length and 630 micron gate width. It provides high gain and linearity up to 18 GHz, with 10 dB gain at 12 GHz and 26 dBm output power at 18 GHz. The chip dimensions are 775 x 260 microns with a thickness of 100 microns. All chips are passivated with Silicon Nitride (SiN).
Feature Summary
- High-gain and high-linearity performance suitable for wideband or narrow-band applications.
- Utilizes a 0.25 micron refractory metal/gold gate structure.
- Passivated with Silicon Nitride (SiN) for reliability.
Applications
- High Linearity Amplifier Applications
- Commercial RF Systems
- Military Communication Equipment
- Hi-Rel Space Applications
Procurement Notes
Verify the specific package type required, as the MWT-1F is available in Chip form and three distinct package types (70, 71, and 73). Confirm that the selected variant meets the thermal and mechanical requirements for the intended deployment environment before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high gain and linearity across frequencies up to 18 GHz. The device is equally effective for both wideband applications, such as 2 to 6 GHz, and narrow-band configurations. Ensure the design accommodates the specific packaging option chosen from the available variants.
Part Context
The MWT-1F belongs to the MwT-1 series of GaAs FETs manufactured by CML Micro. These devices are engineered for medium power and high gain operations within the Ka band frequency range. The product line emphasizes reliability through screening and specialized gate technology.
Replacement Considerations
No public confirmed substitute part numbers are documented for the MWT-1F.
FAQ
What is the maximum operating frequency for the MWT-1F?
The MWT-1F is designed for applications requiring high-gain and linearity up to 18 GHz.
How is the MWT-1F chip passivated?
All MWT-1F chips are passivated using Silicon Nitride (SiN).
What are the physical dimensions of the MWT-1F chip?
The chip dimensions are 775 x 260 microns with a thickness of 100 microns.
